mosfet 1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 2SK3111 features gate voltage rating 30 v low on-state resistance r ds(on) = 180m max. (v gs =10v,i d = 10a) low input capacitance c iss = 1000 pf typ. (v ds =10v,v gs =0v) avalanche capability rated built-in gate protection diode surface mount device available absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 200 v gate to source voltage v gss 30 v i d 20 a i dp * 60 a power dissipation t c =25 62 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =200v,v gs =0 100 a gate leakage current i gss v gs = 30v,v ds =0 10 a gate to source cut off voltage v gs(off) v ds =10v,i d =1ma 2.5 4.5 v forward transfer admittance y fs v ds =10v,i d =10a 3.0 s drain to source on-state resistance r ds(on) v gs =10v,i d =10a 120 180 m input capacitance c iss 1000 pf output capacitance c oss 300 pf reverse transfer capacitance c rss 150 pf turn-on delay time t on 25 ns rise time t r 90 ns turn-off delay time t off 80 ns fall time tf 40 ns v ds =10v,v gs =0,f=1mhz i d =10a,v gs(on) =10v,v dd =100v,r g =10 product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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